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Article
Residual Native Shallow Donor in ZnO
Physical Review Letters
Document Type
Article
Publication Date
3-1-1999
Disciplines
Abstract
High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a multiple-displacement model.
DOI
10.1103/PhysRevLett.82.2552
Citation Information
David C. Look, Joseph W. Hemsky and J. R. Sizelove. "Residual Native Shallow Donor in ZnO" Physical Review Letters Vol. 82 Iss. 12 (1999) p. 2552 - 2555 ISSN: 0031-9007 Available at: http://works.bepress.com/david_look/79/
The original publication is available at http://prl.aps.org/abstract/PRL/v82/i12/p2552_1