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Article
Microcathodoluminescence and Electron Beam Induced Current Observation of Dislocations in Freestanding Thick n-GaN Sample Grown by Hydride Vapor Phase Epitaxy
Journal of Applied Physics
Document Type
Article
Publication Date
11-1-2002
Disciplines
Abstract
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the cleaved surface of the samples could be associated with dislocations. MCL spectra measurements in the vicinity of dislocations and in the matrix do not reveal specific luminescence bands that could be attributed to dislocations but rather suggest that dislocation regions have higher density of deep nonradiative traps.
DOI
10.1063/1.1511822
Citation Information
A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, Z-Q. Fang, et al.. "Microcathodoluminescence and Electron Beam Induced Current Observation of Dislocations in Freestanding Thick n-GaN Sample Grown by Hydride Vapor Phase Epitaxy" Journal of Applied Physics Vol. 92 Iss. 9 (2002) p. 5238 - 5240 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/69/
Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 92.9, and may be found at http://jap.aip.org/resource/1/japiau/v92/i9/p5238_s1