Article
Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs
Applied Physics Letters
Document Type
Article
Publication Date
5-1-1995
Disciplines
Abstract
Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.
DOI
10.1063/1.114268
Citation Information
Z-Q. Fang and David C. Look. "Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs" Applied Physics Letters Vol. 66 Iss. 22 (1995) p. 3033 - 3035 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/67/
Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 66.22, and may be found at http://apl.aip.org/resource/1/applab/v66/i22/p3033_s1