Article
Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C
Applied Physics Letters
Document Type
Article
Publication Date
6-1-1993
Disciplines
Abstract
The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperatures of 300 and 400 °C are reported. Two independent methods were used to determine donor ND and acceptor NA concentrations and activation energy ED0, with the following combined results: ND≂3±1×1018, NA≂1.5±1×1017 cm−3, and ED0=0.645±0.009 eV for the 300 °C layer; ND≂2±1×1017, NA≂7±3×1016 cm−3, and ED0=0.648±0.003 eV for the 400 °C layer. Thus, the deep donor is not the expected EL2, which has ED0=0.75±0.01 eV.
DOI
10.1063/1.109171
Citation Information
David C. Look, G. D. Robinson, J. R. Sizelove and C. E. Stutz. "Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C" Applied Physics Letters Vol. 62 Iss. 23 (1993) p. 3004 - 3006 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/66/
Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 62.23, and may be found at http://apl.aip.org/resource/1/applab/v62/i23/p3004_s1