By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample: A1 (∼0.90 eV), Ax (∼0.72 eV), B (0.61 eV), C1 (0.44 eV), D (0.25 eV), and E1 (0.17 eV), with B dominant. Then, as the etching bias-voltage increases from −50 to −150 V, trap D increases strongly and becomes dominant, while traps A1, C (0.34 eV), and E1 increase at a slower rate. Trap B, on the other hand, is nearly unchanged. Previous electron-irradiation studies are consistent with the E1 traps being N-vacancy related. It is likely that the D traps are also, except that they are in the regions of dislocations.
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Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 82.10, and may be found at http://apl.aip.org/resource/1/applab/v82/i10/p1562_s1