Article
Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxial GaAs - Hopping in a Dense El2-Like Band
Physical Review B
Document Type
Article
Publication Date
8-1-1990
Disciplines
Abstract
Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×1019 cm-3, and energy Ec-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [σ∝exp(-T0/T)1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering.
DOI
10.1103/PhysRevB.42.3578
Citation Information
David C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, et al.. "Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxial GaAs - Hopping in a Dense El2-Like Band" Physical Review B Vol. 42 Iss. 6 (1990) p. 3578 - 3581 ISSN: 0163-1829 Available at: http://works.bepress.com/david_look/6/
The original publication is available at http://prb.aps.org/abstract/PRB/v42/i6/p3578_1