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Article
Predicted Maximum Mobility in Bulk GaN
Applied Physics Letters
Document Type
Article
Publication Date
8-1-2001
Disciplines
Abstract
A 300 K bulk (three-dimensional) mobility of 1245 cm2/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (ND) and acceptor (NA) concentrations, which are ND = 6.7×1015 and NA = 1.7×1015 cm−3. Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of ND and NA, leading to a maximum 300 K mobility of 1350 cm2/V s, and a maximum 77 K mobility of 19 200 cm2/V s.
DOI
10.1063/1.1394954
Citation Information
David C. Look and J. R. Sizelove. "Predicted Maximum Mobility in Bulk GaN" Applied Physics Letters Vol. 79 Iss. 8 (2001) p. 1133 - 1135 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/58/
Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 79.8, and may be found at http://apl.aip.org/resource/1/applab/v79/i8/p1133_s1