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Properties of Aℓ and P Ion-Implanted Layers in ZnSe
Ion Implantation in Semiconductors: Science and Technology
Document Type
Conference Proceeding
Publication Date
1-1-1975
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Abstract
Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature.
DOI
10.1007/978-1-4684-2151-4_31
Citation Information
Y. S. Park, B. K. Shin, David C. Look and D. L. Downing. "Properties of Aℓ and P Ion-Implanted Layers in ZnSe" Ion Implantation in Semiconductors: Science and Technology (1975) p. 245 - 252 ISSN: 030630841X Available at: http://works.bepress.com/david_look/474/
Presented at the 4th International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, Osaka, Japan.