Article
High-Temperature Annealing in Electron-Irradiated CdS
Journal of Applied Physics
Document Type
Article
Publication Date
1-1-1974
Disciplines
Abstract
The room‐temperature irradiation of as‐grown n‐type CdS by 1‐MeV electrons results in an increase in carrier concentration. The damage anneals in the temperature range 250–300°C, and a study of the annealing kinetics reveals an activation energy of about 1.3 eV which is attributed to sulfur‐vacancy motion.
DOI
10.1063/1.1663011
Citation Information
David C. Look. "High-Temperature Annealing in Electron-Irradiated CdS" Journal of Applied Physics Vol. 45 Iss. 1 (1974) p. 492 - 493 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/460/
Copyright © 1974, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 45.1, and may be found at http://dx.doi.org/10.1063/1.1663011.