Article
Electrical Characteristics of Al‐Implanted ZnSe
Applied Physics Letters
Document Type
Article
Publication Date
5-1-1974
Disciplines
Abstract
Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions/cm2 at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼103 Ω/□, after annealing at 900°C for 4 h.
DOI
10.1063/1.1655250
Citation Information
B. K. Shin, Y. S. Park and David C. Look. "Electrical Characteristics of Al‐Implanted ZnSe" Applied Physics Letters Vol. 24 Iss. 9 (1974) p. 435 - 436 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/407/
Copyright © 1974, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 24.9, and may be found at http://dx.doi.org/10.1063/1.1655250.