Article
Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C
Applied Physics Letters
Document Type
Article
Publication Date
6-1-1992
Disciplines
Abstract
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.
DOI
10.1063/1.106813
Citation Information
David C. Look, D. C. Walters, M. Mier, C. E. Stutz, et al.. "Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C" Applied Physics Letters Vol. 60 Iss. 23 (1992) p. 2900 - 2902 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/39/
Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 60.23, and may be found at http://apl.aip.org/resource/1/applab/v60/i23/p2900_s1