Article
Stable Highly Conductive ZnO Via Reduction of Zn Vacancies
Applied Physics Letters
Document Type
Article
Publication Date
1-1-2012
Disciplines
Abstract
Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2produces a resistivity of 1.5 × 10−4 Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10−4 Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration NA to 5 × 1019 cm−3, only 3% of the Ga-donor concentration ND of 1.6 × 1021 cm−3, with ND and NA determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 nm, further bridging the gap between metals and semiconductors.
DOI
10.1063/1.4748869
Citation Information
David C. Look, Timothy C. Droubay and Scott A. Chambers. "Stable Highly Conductive ZnO Via Reduction of Zn Vacancies" Applied Physics Letters Vol. 101 Iss. 10 (2012) ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/387/
Copyright © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 101.10, and may be found at http://dx.doi.org/10.1063/1.4748869.