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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures
MRS Proceedings
Document Type
Conference Proceeding
Publication Date
7-1-2003
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Abstract
In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.
DOI
10.1557/PROC-764-C4.2
Citation Information
Mark J. Yannuzzi, Neil A. Moser, Robert C. Fitch, Gregg H. Jessen, et al.. "Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures" MRS Proceedings Vol. 764 (2003) p. 305 - 314 ISSN: 1946-4274 Available at: http://works.bepress.com/david_look/376/
Presented at the 2003 MRS Spring Meeting, San Francisco, CA.
Copyright © Materials Research Society 2003.