Article
Electron and Hole Traps in N-Doped ZnO Grown on p-Type Si Substrate by MOCVD
Journal of Applied Physics
Document Type
Article
Publication Date
1-1-2007
Disciplines
Abstract
Electron and hole traps in N-doped ZnO were investigated using a structure of n+-ZnO:Al/i-ZnO/ZnO:N grown on a p-Si substrate by metalorganic chemical vapor deposition (for growth of the ZnO:N layer) and sputtering deposition (for growth of the i-ZnO and n+-ZnO:Al layers). Current-voltage and capacitance-voltage characteristics measured at temperatures from 200 to 400 K show that the structure is an abrupt n+−p diode with very low leakage currents. By using deep level transient spectroscopy, two hole traps, H3 (0.35 eV) and H4 (0.48 eV), are found in the p-Si substrate, while one electron trap E3 (0.29 eV) and one hole trap H5 (0.9 eV) are observed in the thin ZnO:N layer. Similarities to traps reported in the literature are discussed.
DOI
10.1063/1.2759181
Citation Information
Zhaoqiang Fang, Bruce B. Claflin, David C. Look, Lei L. Kerr, et al.. "Electron and Hole Traps in N-Doped ZnO Grown on p-Type Si Substrate by MOCVD" Journal of Applied Physics Vol. 102 Iss. 2 (2007) ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/340/
Copyright © 2007, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 102.2, and may be found at http://dx.doi.org/10.1063/1.2759181.