Article
Properties of Semi‐Insulating GaAs:Fe Grown by Hydride Vapor Phase Epitaxy
Journal of The Electrochemical Society
Document Type
Article
Publication Date
8-1-2000
Disciplines
Abstract
In this paper we analyze GaAs grown by hydride vapor phase epitaxy (HVPE) and doped with four different iron concentrations between and . From temperature dependent current‐voltage measurements we observed the highest resistivity in the lowest doped sample. We also quantified the activation energy. These results together with those of time resolved photoluminescence measurements indicate that in the sample with the lowest Fe concentration, EL2 may be dominant. From the analysis of the time resolved photoluminescence measurements, the intrinsic EL2 concentration and the electron and hole capture cross sections of Fe in GaAs were estimated. © 2000 The Electrochemical Society. All rights reserved.
DOI
10.1149/1.1393865
Citation Information
E. Rodríguez Messmer, D. Söderström, P. Hult, S. Marcinkevicius, et al.. "Properties of Semi‐Insulating GaAs:Fe Grown by Hydride Vapor Phase Epitaxy" Journal of The Electrochemical Society Vol. 147 Iss. 8 (2000) p. 3109 - 3110 ISSN: 0013-4651 Available at: http://works.bepress.com/david_look/330/
© The Electrochemical Society, Inc. 2000. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in the Journal of The Electrochemical Society, 147(8), 3109-3110 (2000).