Article
Automated and Calibrated Whole Wafer Etch Pit Density Measurements in GaAs
Journal of Electronic Materials
Document Type
Article
Publication Date
3-1-1989
Abstract
A technique for automated measurement of whole-wafer etch pit density (EPD) for GaAs wafers is presented. The technique relies on an infrared transmission experiment similar to that used to measure EL2 concentration. A theoretical relationship between transmission and EPD is established, including effects due to pit size. The new automated and old visual-count methods are compared on a 3“, low-pressure, liquid-encapsulated Czochralski wafer; it is established that the automated method has much better repeatability. An [EL2] map of this same wafer is also presented.
DOI
10.1007/BF02657407
Citation Information
J. S. Sewell, S. C. Dudley, M. G Mier, David C. Look, et al.. "Automated and Calibrated Whole Wafer Etch Pit Density Measurements in GaAs" Journal of Electronic Materials Vol. 18 Iss. 2 (1989) p. 191 - 197 ISSN: 0361-5235 Available at: http://works.bepress.com/david_look/315/