Article
Identification of Cu-Related Thermally Stimulated Current Trap in Undoped Semi-insulating GaAs
Journal of Electronic Materials
Document Type
Article
Publication Date
1-1-1997
Disciplines
Abstract
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is sometimes observed. The activation energy and capture cross section of T-a are 0.43 eV and 3.7 x 10(-15) cm(2), respectively. Based on a good correlation with the Cu-related photoluminescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that T-a is a Cu-related hole-trap.
DOI
10.1007/s11664-997-0064-1
Citation Information
C. Look, Z-Q. Fang and R. L. Jones. "Identification of Cu-Related Thermally Stimulated Current Trap in Undoped Semi-insulating GaAs" Journal of Electronic Materials Vol. 26 Iss. 12 (1997) p. L29 - L31 ISSN: 0361-5235 Available at: http://works.bepress.com/david_look/309/