Article
Screening of Excitons in GaN Crystals
Journal of Physics-Condensed Matter
Document Type
Article
Publication Date
1-1-1998
Disciplines
Abstract
A study was made of the screening of excitons in a GaN sample, which was simultaneously excited with a HeCd laser and an Ar+ ion laser. The Ar+ ion laser excites carriers in a two step process, involving an impurity or defect. A comparison with transport measurements shows that the photoluminescence is probably emitted from a higher-quality portion of the sample than that which conducts the current.
DOI
10.1088/0953-8984/10/25/009
Citation Information
Donald C. Reynolds, David C. Look, B. Jogai and Richard J. Molnar. "Screening of Excitons in GaN Crystals" Journal of Physics-Condensed Matter Vol. 10 Iss. 25 (1998) p. 5577 - 5581 ISSN: 0953-8984 Available at: http://works.bepress.com/david_look/304/