Article
Photoelectrochemical Capacitance-Voltage Measurements in GaN
Journal of Electronic Materials
Document Type
Article
Publication Date
1-1-1998
Disciplines
Abstract
Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.
DOI
10.1007/s11664-998-0182-4
Citation Information
C. E. Stutz, M. Mack, M. D. Bremser, O. H. Nam, et al.. "Photoelectrochemical Capacitance-Voltage Measurements in GaN" Journal of Electronic Materials Vol. 27 Iss. 5 (1998) ISSN: 0361-5235 Available at: http://works.bepress.com/david_look/298/