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Article
Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization
Solid-State Electronics
  • M. G Mier
  • David C. Look, Wright State University - Main Campus
  • D. C. Walters
  • D. L. Beasley
Document Type
Article
Publication Date
3-1-1992
Abstract

Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.

DOI
10.1016/0038-1101(92)90235-5
Citation Information
M. G Mier, David C. Look, D. C. Walters and D. L. Beasley. "Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization" Solid-State Electronics Vol. 35 Iss. 3 (1992) p. 319 - 323 ISSN: 0038-1101
Available at: http://works.bepress.com/david_look/285/