Article
Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization
Solid-State Electronics
Document Type
Article
Publication Date
3-1-1992
Disciplines
Abstract
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.
DOI
10.1016/0038-1101(92)90235-5
Citation Information
M. G Mier, David C. Look, D. C. Walters and D. L. Beasley. "Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization" Solid-State Electronics Vol. 35 Iss. 3 (1992) p. 319 - 323 ISSN: 0038-1101 Available at: http://works.bepress.com/david_look/285/