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Article
Similarities in the Bandedge and Deep-Centre Photoluminescence Mechanisms of ZnO and GaN
Solid State Communications
  • Donald C. Reynolds
  • David C. Look, Wright State University - Main Campus
  • B. Jogai
  • H. Morkoç
Document Type
Article
Publication Date
3-1-1997
Abstract

Several of the optical transitions in ZnO and GaN appear to derive from a similar origin and have considerable overlap in the energy regions where they occur. In particular the donor-acceptor pair transitions and the well known ''yellow band'' in GaN and the analogous ''green band'' in ZnO show remarkable similarities. Because of these similarities it is likely that the respective transitions in the two materials are defect related and share common mechanisms. (C) 1997 Published by Elsevier Science Ltd.

DOI
10.1016/S0038-1098(96)00697-7
Citation Information
Donald C. Reynolds, David C. Look, B. Jogai and H. Morkoç. "Similarities in the Bandedge and Deep-Centre Photoluminescence Mechanisms of ZnO and GaN" Solid State Communications Vol. 101 Iss. 9 (1997) p. 643 - 646 ISSN: 0038-1098
Available at: http://works.bepress.com/david_look/283/