Article
The Future Of ZnO Light Emitters
Physica Status Solidi A-Applications and Materials Science
Document Type
Article
Publication Date
8-1-2004
Disciplines
Abstract
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p-n junctions, and p-type ZnO is difficult to make. Thus, the future of ZnO light emitters depends on either producing low-resistivity p-type ZnO, or in mating n-type ZnO with a p-type hole injector. Perhaps the best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense 390 +/- 1 nm emission at both 300 K and 500 K. However, development of p-ZnO is proceeding at a rapid pace, and a p-n homojunction should be available soon.
DOI
10.1002/pssa.200404803
Citation Information
David C. Look, Bruce Claflin, Y. I. Alivov and Seong-Ju Park. "The Future Of ZnO Light Emitters" Physica Status Solidi A-Applications and Materials Science Vol. 201 Iss. 10 (2004) p. 2203 - 2212 ISSN: 1862-6300 Available at: http://works.bepress.com/david_look/253/