"ZnO-Based MIS Diodes Prepared by Ion Implantation" by Ya I. Alivov

Selected Works of David C. Look

Article

ZnO-Based MIS Diodes Prepared by Ion Implantation

Physics of Low Dimensional Structures

Ya I. Alivov
V. I Zinenko
Y. A. Agafonov
A. N. Pustovit
David C. Look, Wright State University - Main Campus
M. V. Chukichev
B. M. Ataev
V. V. Mamedov

Document Type

Article

Publication Date

1-1-2003

Disciplines

Abstract

A ZnO-based metal-insulator-semiconductor (MIS) type diode, with low leakage and a threshold voltage of about 3 V, has been fabricated using an isolation layer achieved by N+ ion implantation. Ultraviolet light emission peaking at 388 nm and with full width of half maximum 0.12 eV has been observed under forward bias at room temperature. The properties of this emission have been studied as a function of injection current.

Citation Information

Ya I. Alivov, V. I Zinenko, Y. A. Agafonov, A. N. Pustovit, et al.. "ZnO-Based MIS Diodes Prepared by Ion Implantation" Physics of Low Dimensional Structures Iss. 9-10 (2003) p. 83 - 88 ISSN: 0204-3467
Available at: http://works.bepress.com/david_look/252/