"Fabrication of ZnO-Based Metal-insulator-Semiconductor Diodes by Ion Implantation" by David C. Look

Selected Works of David C. Look

Article

Fabrication of ZnO-Based Metal-insulator-Semiconductor Diodes by Ion Implantation

Solid-State Electronics

David C. Look, Wright State University - Main Campus
Ya I. Alivov
B. M. Ataev
M. V. Chukichev
V. V. Mamedov
V. I Zinenko
Y. A. Agafonov
A. N. Pustovit

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Document Type

Article

Publication Date

12-1-2004

Disciplines

Abstract

A ZnO-based metal-insulator-semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I-V dependences show a good rectifying diode-like behavior with a low leakage current of 10(-6) A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.

DOI

10.1016/j.sse.2004.05.063

Citation Information

David C. Look, Ya I. Alivov, B. M. Ataev, M. V. Chukichev, et al.. "Fabrication of ZnO-Based Metal-insulator-Semiconductor Diodes by Ion Implantation" Solid-State Electronics Vol. 48 Iss. 12 (2004) p. 2343 - 2346 ISSN: 0038-1101
Available at: http://works.bepress.com/david_look/235/