Article
Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN
Solid State Communications
Document Type
Article
Publication Date
1-1-2001
Disciplines
Abstract
Lattice-mismatched epitaxy produces a high concentration of dislocations (N-dis) in the interface region, and this region is often highly conductive, due to donor (N-D) decoration of the dislocations. Here we show that a simple postulate, N-D = alpha (N-dis/c), where c is the lattice constant and alpha a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N-dis This prediction is experimentally verified in GaN grown on Al2O3, and is also applied to other mismatched systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
DOI
10.1016/S0038-1098(01)00010-2
Citation Information
David C. Look, C. E. Stutz, Richard J. Molnar, K. Saarinen, et al.. "Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN" Solid State Communications Vol. 117 Iss. 10 (2001) p. 571 - 575 ISSN: 0038-1098 Available at: http://works.bepress.com/david_look/220/