Article
Effects of Ar Vs. O2 Ambient On Pulsed-Laser-Deposited Ga-Doped ZnO
Journal of Crystal Growth
Document Type
Article
Publication Date
1-1-2011
Disciplines
Abstract
Ga-doped ZnO films were deposited by pulsed laser deposition (PLD) at 200 degrees C and 10 mTorr in either pure argon (Ar films) or in oxygen (O-2 films). The bulk resistivity of the Ar films is 10(-4) Omega cm at 300 K, two orders of magnitude lower than that of the O-2 films. In the Ar films, the donor concentration N-D as determined by a detailed Hall-effect analysis is close to 100% of the total Ga concentration [Gal measured by secondary ion mass spectrometry (SIMS), while in the O-2 films ND is less than 50% of [Gal. Furthermore, the compensation ratio K=N-A/N-D is >90% for the O-2 films and
DOI
10.1016/j.jcrysgro.2011.03.002
Citation Information
Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, et al.. "Effects of Ar Vs. O2 Ambient On Pulsed-Laser-Deposited Ga-Doped ZnO" Journal of Crystal Growth Vol. 324 Iss. 1 (2011) p. 110 - 114 ISSN: 0022-0248 Available at: http://works.bepress.com/david_look/210/