A comprehensive characterization, including room temperature Hall effect, near infrared absorption, temperature dependent dark current and photocurrent (using 1.13 eV light), normalized thermally stimulated current (NTSC), photoluminescence at 4.2 K in both near band edge and deep level regions, and selective pair photoluminescence (SPL) at 2 K, has been carried out on undoped semi-insulating GaAs samples, cut from four wafers which were grown by the low pressure liquid encapsulated Czochralski technique and annealed by three different schedules: a 1100 °C anneal with either fast or slow cooling, or a 1000 °C standard anneal. The 1100 °C anneal clearly introduces higher concentrations of NTSC traps near 0.3 and 0.5 eV, a PL center at 0.8 eV, and acceptor centers, which are mainly due to the point defects and increase the resistivity. Slow cooling to some extent reduces all of these additional centers. The SPL measurements show changes in the relative intensities of C, Zn, and Si related emissions with changes in annealing conditions. © 1998 American Institute of Physics.
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Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 83.1, and may be found at http://dx.doi.org/10.1063/1.366680.