Article
Depletion Approximation in Semiconductor Trap Filling Analysis: Application To EL2 in GaAs
Solid-State Electronics
Document Type
Article
Publication Date
9-1-1996
Disciplines
Abstract
The relative change in capacitance Delta C/C, due to trap-filling caused by a change in surface potential Delta V, is the basis of deep level transient spectroscopy (DLTS) and several related experiments. Here we formulate an exact analysis of Delta C/C, involving a numerical (N) solution of the Poisson equation, and compare with experiment and with a new analytical formula derived from a depletion-approximation (DA) solution of the Poisson equation, but without the limitations on trap density inherent in older DA formulas. Limits on the agreement of the N and DA solutions are established as a function of Delta V for the important case of EL2 in GaAs. Copyright (C) 1996 Elsevier Science Ltd
DOI
10.1016/0038-1101(96)00021-4
Citation Information
David C. Look, Z-Q. Fang and J. R. Sizelove. "Depletion Approximation in Semiconductor Trap Filling Analysis: Application To EL2 in GaAs" Solid-State Electronics Vol. 39 Iss. 9 (1996) p. 1398 - 1400 ISSN: 0038-1101 Available at: http://works.bepress.com/david_look/208/