Article
Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy
Journal of Electronic Materials
Document Type
Article
Publication Date
1-1-1999
Disciplines
Abstract
We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4 x 10(-18) cm(2), is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.
DOI
10.1007/s11664-999-0210-z
Citation Information
Z-Q. Fang, Q. H. Xie, David C. Look, J. E. Ehret, et al.. "Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy" Journal of Electronic Materials Vol. 28 Iss. 8 (1999) p. L13 - L16 ISSN: 0361-5235 Available at: http://works.bepress.com/david_look/207/