"Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs" by David C. Look

Selected Works of David C. Look

Article

Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs

Journal of Electronic Materials

David C. Look, Wright State University - Main Campus
Z-Q. Fang
J. R. Sizelove

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Document Type

Article

Publication Date

1-1-1995

Disciplines

Abstract

A rigorous formulation of capacitance changes during trap filling processes is presented and used to accurately determine the electron capture cross section of EL2 in GaAs at a particular temperature, 377K, in this case. The value, sigma(n) (377K) = 2.7 x 10(-16) cm(2), is compared with that predicted from the emission dependence.

DOI

10.1007/BF02655464

Citation Information

David C. Look, Z-Q. Fang and J. R. Sizelove. "Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs" Journal of Electronic Materials Vol. 24 Iss. 10 (1995) p. 1461 - 1464 ISSN: 0361-5235
Available at: http://works.bepress.com/david_look/204/