Article
Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material
Applied Physics Letters
Document Type
Article
Publication Date
5-1-1994
Disciplines
Abstract
This work shows how electrochemical capacitance‐voltage (EC‐V) measurements can be used to evaluate delta‐doped pseudomorphic high electron mobility transistor material. These EC‐V measurements are compared with magnetic‐field‐dependent Hall effect (M‐Hall) measurements and a self‐consistent Poisson/k⋅p calculation of the band structure and electron concentration. The EC‐V technique can clearly delineate the cap layer, the delta‐doped layer, and the InxGa1−xAs channel layer, whereas the M‐Hall method characterizes only the cap and InxGa1−xAs channel layers. The amount of electron charge seen by the EC‐V and M‐Hall measurements show good agreement with theory.
DOI
10.1063/1.111471
Citation Information
C. E. Stutz, B. Jogai, David C. Look, J. M. Ballingall, et al.. "Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material" Applied Physics Letters Vol. 64 Iss. 20 (1994) p. 2703 - 2705 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/2/
Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 64.20, and may be found at http://apl.aip.org/resource/1/applab/v64/i20/p2703_s1