Article
On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature
Journal of Applied Physics
Document Type
Article
Publication Date
9-1-1991
Disciplines
Abstract
Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of AsGa defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the AsGa defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.
DOI
10.1063/1.349295
Citation Information
David C. Look. "On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature" Journal of Applied Physics Vol. 70 Iss. 6 (1991) p. 3148 - 3151 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/19/
Copyright © 1991, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 70.6, and may be found at http://jap.aip.org/resource/1/japiau/v70/i6/p3148_s1