Article
Defect Nature of the 0.4-Ev Center in O-Doped GaAs
Applied Physics Letters
Document Type
Article
Publication Date
5-1-1983
Disciplines
Abstract
We have studied the Ec - 0.4 e V center in O-doped GaAs by a combination of temperature-dependent Hall-effect measurements, spark-source mass spectroscopy, and secondary-ion mass spectroscopy. The conclusion is that neither 0 nor any other impurity can account for the O.4-eV center; therefore, it is a pure defect.
DOI
10.1063/1.94109
Citation Information
David C. Look, S. Chaudhuri and J. R. Sizelove. "Defect Nature of the 0.4-Ev Center in O-Doped GaAs" Applied Physics Letters Vol. 42 Iss. 9 (1983) p. 829 - 831 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/169/
Copyright © 1983, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 42.9, and may be found at http://apl.aip.org/resource/1/applab/v42/i9/p829_s1