Article
Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X
Journal of Applied Physics
Document Type
Article
Publication Date
1-1-1995
Disciplines
Abstract
We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.
DOI
10.1063/1.359052
Citation Information
M. J. Martinez, David C. Look, J. R. Sizelove and F. L. Schuermeyer. "Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X" Journal of Applied Physics Vol. 77 Iss. 2 (1995) p. 661 - 664 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/166/
Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 77.2, and may be found at http://jap.aip.org/resource/1/japiau/v77/i2/p661_s1