Article
New AsGa Related Center in GaAs
Physical Review Letters
Document Type
Article
Publication Date
1-1-1993
Disciplines
Abstract
A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐insulating (2×10;7 Ω cm) molecular beam epitaxial GaAs grown at 400 °C. Although the ir photoquenching and thermal recovery characteristics are nearly identical to those of ;EL2, the thermal activation energy is only 0.65±0.01 eV, much lower than the ;EL2 value of 0.75±0.01 eV. Other properties which are different include the electron‐capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.
DOI
10.1103/PhysRevLett.70.465
Citation Information
David C. Look, Z-Q. Fang, J. R. Sizelove and C. E. Stutz. "New AsGa Related Center in GaAs" Physical Review Letters Vol. 70 Iss. 4 (1993) p. 465 - 468 ISSN: 0031-9007 Available at: http://works.bepress.com/david_look/164/
The original publication is available at http://prl.aps.org/abstract/PRL/v70/i4/p465_1