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Article
Dislocation Scattering in GaN
Physical Review Letters
Document Type
Article
Publication Date
2-1-1999
Disciplines
Abstract
A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.
DOI
10.1103/PhysRevLett.82.1237
Citation Information
David C. Look and J. R. Sizelove. "Dislocation Scattering in GaN" Physical Review Letters Vol. 82 Iss. 6 (1999) p. 1237 - 1240 ISSN: 0031-9007 Available at: http://works.bepress.com/david_look/163/
The original publication is available at http://prl.aps.org/abstract/PRL/v82/i6/p1237_1