Article
Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs
Applied Physics Letters
Document Type
Article
Publication Date
11-1-1996
Disciplines
Abstract
Both multistep wafer‐annealed (MWA) and ingot‐annealed semi‐insulating (SI) GaAs wafers, grown by the Czochralski technique, are characterized by using normalized thermally stimulated current (NTSC) spectroscopy. Two main NTSC traps, T3 at 200 K and T5 at 140 K, which are thought to be related to arsenic vacancy defects, are found to be largely suppressed by MWA processes, especially by a new MWA process. Concomitant with a decrease of these traps, a significant increase of the threshold electrical field for both the thermal quenching of T5 and the low‐temperature photocurrent saturation has been observed
DOI
10.1063/1.117278
Citation Information
Z-Q. Fang, David C. Look, H. Yamamoto and H. Shimakura. "Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs" Applied Physics Letters Vol. 69 Iss. 22 (1996) p. 3417 - 3419 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/158/
Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 69.22, and may be found at http://apl.aip.org/resource/1/applab/v69/i22/p3417_s1