Article
ZnO Diode Fabricated by Excimer-Laser Doping
Applied Physics Letters
Document Type
Article
Publication Date
5-1-2000
Disciplines
Abstract
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.
DOI
10.1063/1.126599
Citation Information
Toru Aoki, Yoshinori Hatanaka and David C. Look. "ZnO Diode Fabricated by Excimer-Laser Doping" Applied Physics Letters Vol. 76 Iss. 22 (2000) p. 3257 - 3258 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/153/
Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 76.22, and may be found at http://apl.aip.org/resource/1/applab/v76/i22/p3257_s1.