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Article
Depth Measurement of Doped Semiconductors Using the Hall Technique
Journal of Applied Physics
  • G. C. DeSalvo
  • David C. Look, Wright State University - Main Campus
  • Christopher A. Bozada
  • J. L. Ebel
Document Type
Article
Publication Date
1-1-1997
Comments

Copyright © 1997, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 81.1, and may be found at http://jap.aip.org/resource/1/japiau/v81/i1/p281_s1

DOI
10.1063/1.363846
Citation Information
G. C. DeSalvo, David C. Look, Christopher A. Bozada and J. L. Ebel. "Depth Measurement of Doped Semiconductors Using the Hall Technique" Journal of Applied Physics Vol. 81 Iss. 1 (1997) p. 281 - 284 ISSN: 0021-8979
Available at: http://works.bepress.com/david_look/151/