Article
Electrical Characterization of Vapor-Phase-Grown Single-Crystal ZnO
Applied Physics Letters
Document Type
Article
Publication Date
2-1-2002
Disciplines
Abstract
Gold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now.
DOI
10.1063/1.1452781
Citation Information
F. D. Auret, S. A. Goodman, M. J. Legodi, W. E. Meyer, et al.. "Electrical Characterization of Vapor-Phase-Grown Single-Crystal ZnO" Applied Physics Letters Vol. 80 Iss. 8 (2002) p. 1340 - 1342 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/15/
Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 80.8, and may be found at http://apl.aip.org/resource/1/applab/v80/i8/p1340_s1