A novel system capable of making on‐wafer Hall‐effect measurements of a patterned wafer during the fabrication sequence has been developed. A flat, powerful rare‐earth magnet provides the magnetic field required. The wafer need only have van der Pauw patterns available for on‐wafer measurement capability. Measurement of room temperature Hall mobility can quickly and easily be obtained, making possible detailed study of carrier concentration and mobility variations during wafer fabrication.