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Article
Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals
Physical Review B
Document Type
Article
Publication Date
11-1-2001
Disciplines
Abstract
We have applied positron annihilation spectroscopy to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1 cm-1. The Ga vacancies recover in long-range migration processes at 500–600 K with an estimated migration energy of 1.5 (2) eV. Since the native Ga vacancies in as-grown GaN survive up to much higher temperatures (1300–1500 K), we conclude that they are stabilized by forming complexes with oxygen impurities. The estimated binding energy of 2.2 (4) eV of such complexes is in good agreement with the results of theoretical calculations.
DOI
10.1103/PhysRevB.64.233201
Citation Information
K. Saarinen, T. Suski, I. Grzegory and David C. Look. "Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals" Physical Review B Vol. 64 Iss. 23 (2001) ISSN: 1098-0121 Available at: http://works.bepress.com/david_look/13/
The original publication is available at http://prb.aps.org/abstract/PRB/v64/i23/e233201