Because of the high bulk resistivity of semi‐insulating GaAs, surface or near‐surface effects can change the apparent magnitudes of resistivity, mobility, and carrier concentration. We consider the following causes: (1) above‐surface conduction, such as that due to impurities in a porous oxide; (2) subsurface conduction, due to sawing and polishing damage; (3) tunneling conduction in surface states; and (4) changes in near‐surface conduction due to the modification of surface potential by surface states or absorbates. The most important of these effects appear to be subsurface damage and surface potential changes.