Article
Evidence for Shallow Acceptors in GaN
Journal of Applied Physics
Document Type
Article
Publication Date
6-1-2001
Disciplines
Abstract
Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A0X’s) collapsing to n=2 and n=3 excited states, respectively, of the acceptors involved. Application of this model to two sets of A0X-related lines in hydride-vapor-phase-grown GaN gives acceptor energies of 85±1, and 115±1 meV, respectively. The existence of such shallow acceptor states, if confirmed, is of great technological importance.
DOI
10.1063/1.1364646
Citation Information
D. C. Reynolds, David C. Look, B. Jogai and Richard J. Molnar. "Evidence for Shallow Acceptors in GaN" Journal of Applied Physics Vol. 89 Iss. 11 (2001) p. 6272 - 6274 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/119/
Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 89.11, and may be found at http://jap.aip.org/resource/1/japiau/v89/i11/p6272_s1