Article
Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures
Journal of Applied Physics
Document Type
Article
Publication Date
7-15-1994
Disciplines
Abstract
Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.
DOI
10.1063/1.357846
Citation Information
David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, et al.. "Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures" Journal of Applied Physics Vol. 76 Iss. 2 (1994) p. 1029 - 1032 ISSN: 0021-8979 Available at: http://works.bepress.com/david_look/116/
Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 76.2, and may be found at http://jap.aip.org/resource/1/japiau/v76/i2/p1029_s1.