Previous attempts to passivate the n‐type (100)GaAs surface have significantly reduced only the surface recombination centers, but not the surface acceptors which pin the Fermi level. Here we show that a 100 Å molecular beam epitaxial layer grown at 200 °C reduces the effective surface potential energy − eϕs from 0.70 to 0.17 eV, nearly eliminates light sensitivity, and permits nonalloyed ohmic contacts. After a 10 min, 450 °C anneal, − eϕs increases only to 0.22 eV.