Growth of crystalline cobalt ferrite thin films at lower temperatures using pulsed-laser deposition techniqueJournal of Applied Physics (2010)
AbstractCobaltferritethin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600 °C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobaltferritefilms, due to the large magnetoelastic coupling of cobaltferrite. It was shown in this study, that polycrystalline films with (111)-preferred orientation could be prepared at substrate temperatures as low as 250 °C. The growth of crystalline cobaltferritefilms at such low temperatures indicates the potential to use cobaltferrite for microelectromechanical systemsdevices and sensor applications including integration with a wider range of multilayer device structures.
- Thin films,
- Magnetic anisotropy,
- Magnetic films,
- Thin film growth
Citation InformationA. Raghunathan, David C. Jiles and Ikenna C. Nlebedim. "Growth of crystalline cobalt ferrite thin films at lower temperatures using pulsed-laser deposition technique" Journal of Applied Physics Vol. 107 Iss. 9 (2010)
Available at: http://works.bepress.com/david_jiles/57/