Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6
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The Department of Electrical and Computer Engineering (ECpE) contains two focuses. The focus on Electrical Engineering teaches students in the fields of control systems, electromagnetics and non-destructive evaluation, microelectronics, electric power & energy systems, and the like. The Computer Engineering focus teaches in the fields of software systems, embedded systems, networking, information security, computer architecture, etc.
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The Department of Electrical Engineering was formed in 1909 from the division of the Department of Physics and Electrical Engineering. In 1985 its name changed to Department of Electrical Engineering and Computer Engineering. In 1995 it became the Department of Electrical and Computer Engineering.
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1909-present
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- Department of Electrical Engineering (1909-1985)
- Department of Electrical Engineering and Computer Engineering (1985-1995)
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- College of Engineering (parent college)
- Department of Physics and Electrical Engineering (predecessor)
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Abstract
Gd5(Six Ge 1−x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3 Ge 2.7 and Gd5Si1.4 Ge 2.6. We have investigated the first order and second orderphase transition temperatures of these samples using magnetic moment vs. temperature andmagnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.
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The following article appeared in J. Appl. Phys. 117, 17D106 (2015) and may be found at http://dx.doi.org/10.1063/1.4907190.