Article
On-Chip Sensors to Measure Level of Transient Events
Proceedings of the 39th Electrical Overstress/Electrostatic Discharge Symposium (2017, Tucson, AZ)
Abstract
On-die circuits were developed to measure the size of transient electrical events experienced at I/O pads. The circuits allow an integrated circuit (IC) to determine the peak voltages across the electrostatic discharge diodes during the event. Experiments and simulations with a 90 nm test chip show the sensor can determine the peak magnitude of the transient event within 1 A for events larger than 0.7 A and duration longer than 1 ns.
Meeting Name
39th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD (2017: Sep. 10-14, Tucson, AZ)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
- Voltage Measurement,
- Electrostatic Discharges,
- Transient Analysis,
- Integrated Circuit Modeling,
- Capacitors,
- Detectors
International Standard Book Number (ISBN)
978-1-58537-293-5
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
9-1-2017
Publication Date
01 Sep 2017
Disciplines
Citation Information
Abhishek Patnaik, M. Suchak, Ramu Seva, Keerthana Pamidimukkala, et al.. "On-Chip Sensors to Measure Level of Transient Events" Proceedings of the 39th Electrical Overstress/Electrostatic Discharge Symposium (2017, Tucson, AZ) (2017) Available at: http://works.bepress.com/daryl-beetner/78/