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Gamma Radiation Induced Effects in Floppy and Rigid Ge-Containing Chalcogenide Thin Films
Journal of Applied Physics
  • Mahesh S. Ailavajhala, Boise State University
  • Darryl P. Butt, Boise State University
  • Maria Mitkova, Boise State University
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We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.

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Citation Information
Mahesh S. Ailavajhala, Darryl P. Butt and Maria Mitkova. "Gamma Radiation Induced Effects in Floppy and Rigid Ge-Containing Chalcogenide Thin Films" Journal of Applied Physics (2014)
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